HP142TSW

NPN DARLINGTON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HP142TSW
█　APPLICATIONS　High DC Current Gain
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-263
T stg ——Storage Temperature………………………… －55~150℃
T j ——Junction Temperature……………………………… 150℃　PC——Collector Dissipation（T c=25℃）…………………… 70W
VCBO ——Collector-Base Voltage…………………………… 100V
VCEO——Collector-Emitter Voltage………………………… 100V
1―Base，B
VEBO ——Emitter-Base Voltage……………………………… 5V
2―Collector，C
3―Emitter, E
IC——Collector Current（DC）……………………………… 8A
IB——Base Current……………………………………………0.5A
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol　Characteristics　Min　BVCEO(SUS)
Collector-Emitter Sustaining Voltage
１００　Ｖ　IC=30mA, IB=0　ICEO
Collector Cutoff Current
２　ｍＡ　VCE=50V, IB=0
ICBO
Collector Cutoff Current
１　ｍＡ　VCB=100V, IE=0
IEBO　Emitter-Base Cutoff Current　２　ｍＡ　VEB=5V, IC=0　HFE（1）　DC Current Gain　１０００　VCE=4V, IC=0.5A　１０００　VCE=4V, IC=3A
２　Ｖ　IC=5A, IB =10mA　３　Ｖ　IC=10A, IB =40mA
HFE（2）
VCE(sat1)　Collector- Emitter Saturation Voltage　VCE(sat2)
Typ　Max　Unit Test Conditions VBE(sat )　Base- Emitter Saturation Voltage　３．５　Ｖ　IC=10A, IB =40mA　VBE(on)
Base- Emitter On Voltage
Deiay time
０．１５　３　Ｖ　ｕＳ　VCE=4V,IC=10A,　tD
tR
Rise Time
０．５５　ｕＳ　tS
Storage Time
２．５　ｕＳ　tF
Fall Time
２．５　ｕＳ　Vcc=30V,Ic=5A
IB1=20mA
IB2=-20mA
Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HP142TSW