PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP147T █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 80W VCBO——Collector-Base Voltage………………………… -100V VCEO——Collector-Emitter Voltage……………………… -100V 1―Base，B 2―Collector，C 3―Emitter, E VEBO——Emitter-Base Voltage……………………………… -5V IC——Collector Current（DC）……………………………… -10A IB——Base Current…………………………………………-0.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO(SUS) Characteristics Collector-Emitter Sustaining Voltage Min Typ Max -100 Unit Test Conditions V IC=-30mA, IB=0 ICEO Collector Cutoff Current -2 mA VCE=-50V, IB=0 ICBO Collector Cutoff Current -1 mA VCB=-100V, IE=0 IEBO Emitter-Base Cutoff Current -2 mA VEB=-5V, IC=0 HFE（1） DC Current Gain HFE（2） VCE(sat1) 1000 VCE=-4V, IC=-5A 500 VCE=-4V, IC=-10A Collector- Emitter Saturation Voltage VCE(sat2) VBE(sat) Base- Emitter Saturation Voltage VBE(on) Base- Emitter On Voltage -2 V IC=-5A, IB=-10mA -3 V IC=-10A, IB=-40mA -3.5 V IC=-10A, IB=-40mA -3 V VCE=-4V,IC=-10A, tD Deiay time 0.15 uS tR Rise Time 0.55 uS tS Storage Time 2.5 uS tF Fall Time 2.5 uS Vcc=-30V,Ic=-5A IB1=-20mA IB2=20mA Shantou Huashan Electronic Devices Co.,Ltd. PNP DARLINGTON TRANSISTOR HP147T