SAMWIN SW634 General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. : 250 V : 0.45 ohm : 8.5 A : 28 nc : 72 W D G S Absolute Maximum Ratings Symbol VDSS ID IDM Parameter Value Units Drain to Source Voltage 250 V Continuous Drain Current (@Tc=25℃) 8.5 A Continuous Drain Current (@Tc=100℃) 6.5 A 34 A ±30 V Drain Current Pulsed (Note 1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ Peak Diode Recovery dv/dt (Note 3) 5.0 V/ns 72 W 0.57 W/℃ -55 ~ +150 ℃ 300 ℃ dv/dt Total Power Dissipation (@Tc=25℃) PD TSTG,TJ TL Derating Factor above 25℃ Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Value Symbol Parameter Units Min Typ Max RθJC Thermal Resistance, Junction-to-Case - - 1.73 ℃/ W RθCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/ W RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/ W 1/6 REV0.1 04.10.1 SAMWIN Electrical Characteristics SW634 (Tc=25℃ unless otherwise noted) Value Symbol Parameter Test Conditions Units Min Typ Max 250 - - V - 0.544 - V/℃ - - 1 uA Off Characteristics BVDSS Drain- Source Breakdown Voltage VGS=0V,ID=250uA △BVDSS/△ Tj Breakdown Voltage Temperature coefficient ID=250uA,referenced to 25℃ VDS=250V, VGS=0V IDSS IGSS Drain-Source Leakage Current VDS=200V, Tc=125℃ Gate-Source Leakage Current VGS=30V,VDS=0V - - 100 nA Gate-Source Leakage Reverse VGS=-30V, VDS=0V - - -100 nA 2.0 - 4.0 V - - 0.45 ohm - - 1220 - - 130 - - 32 - - 38 - - 38 - - 150 - - 80 - 28 36 - 5 - - 10 - Min. Typ. Max. - - 8.5 - - 34 - - 1.5 V - 170 - ns - 0.85 - uc On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA RDS(ON) Static Drain-Source On-state Resistance VGS=10V,ID=4.0A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz pF Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time VDD=125V,ID=8.5A RG=50ohm (Note4,5) Fall Time Total Gate Charge Gate-Source Charge VDS=200V,VGS=10V, ID=8.5A (Note4,5) Gate-Drain Charge (Miller Charge) ns nc Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source Current ISM Pulsed Source Current Integral Reverse p-n Junction Diode in the MOSFET G VSD Diode Forward Voltage IS=8.5A,VGS=0V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS=8.5A,V GS=0V, dIF/dt=100A/us D Unit. A s NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=5.6mH,IAS=8.5A,VDD=50V,RG=0ohm, Starting TJ=25℃ 3. ISD≤8.5A,di/dt≤100A/us,VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. REV0.1 S 2/6 04.10.1 SAMWIN SW634 VGS top: 15V 10V 9V 8V 7V 6V 5.5V 5V bottom:4.5V 1 10 0 4.5V 10 -1 10 -1 0 10 1 10 10 Vds,Drain-to-Source voltage [V] Fig 2. Transfer Characteristics Fig 1. On-State Characteristics 1.00 1 0.75 10 VGS=20V VGS=10V 0.50 150 0 10 25 0.25 Note: 1.vGS=0v 2.250us test -1 0.00 10 0 2 4 6 8 10 12 14 16 0.2 0.4 0.6 ID, Drain Current[A]] 0.8 1.0 1.2 1.4 1.6 VSD,Source-Drain Voltage[V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature 12 VDS=200V 10 VDS=125V VDS=50V 8 6 4 2 0 0 5 10 15 20 25 QG,Total Gate Charge [nC] Fig 6. Gate Charge Characteristics Fig 5. Capacitance Characteristics (Non-Repetitive) 3/6 REV0.1 04.10.1 SAMWIN SW634 3.0 1.2 RDS(ON) (Normalized) 1.0 0.9 Drain to source on resistance 2.5 1.1 Note: 1.VGS=0V 2.0 1.5 1.0 Note: 1.VGS=10V 0.5 2.ID=250uA 2.ID=4A 0.0 0.8 -100 -50 0 50 100 150 200 -50 0 o 2 9 8 7 100us ID ,Drain Current[A] ID , Drain Current[A] 10us 1 1ms 10ms 10 150 Fig 8. On-Resistance Variation vs. Junction Temperature Operation In This Area Limted By RDS(ON) 10 100 TJ,Junction Temperature[ C] Fig 7. Breakdown Voltage Variation vs. Junction Temperature 10 50 o TJ,Junction Temperature [ C] 0 6 5 4 3 2 Note: 1.Tc=25 C 10 1 2.Tj=150 C 3.Single Pulse -1 0 1 10 10 10 2 0 3 25 10 50 75 125 150 Tc,Case Temperature [ C] Fig9. Maximum Safe Operating 1 0 100 o VD,Drain-Source Voltage[V] Fig 10. Maximum Drain Current Vs. Case Temperature 0 D = 0 .5 0 .2 0 .1 1 0 0 .0 5 -1 0 .0 2 S IN G L E 0 .0 1 P U L S E N o t e : 1 .Z (t)= 1 .7 3 J C 1 0 -2 1 0 o C / w M a x 2 .D u t y F a c to r ,D = t 1 /t2 3 .T j-T c = P D M * Z (t) J C -5 1 0 -4 1 0 t 1 ,S q u a r e -3 1 0 W a v e -2 P u ls e 1 0 -1 D u r a tio n 1 0 0 1 0 ( s e c ) Fig 11. Transient Thermal Response Curve 4/6 REV0.1 04.10.1 1 SAMWIN SW634 VGS Same Type as DUT 50KΩ Qg 10V 200nF 300nF Qgd Qgs VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) 10V Pulse Generator RG DUT VDS Vin 90% 10% tf td(on) tr ton td(off) toff Fig 13. Switching test Circuit & Waveforms L 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD VDS VDD BVDSS IAS RG VDD DUT ID(t) VDS(t) 10V tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV0.1 04.10.1 SAMWIN SW634 + DUT VDS __ L Driver VDD RG Same Type as DUT VGS ● ● VGS (Driver) dv/dt controlled by RG Is controlled by pulse period Gate Pulse Width D = --------------------------Gate Pulse Period 10V IFM,Body Diode Forward Current di/dt IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VDD Vf Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6 REV0.1 04.10.1