TSP740M / TSF740M 400V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. • • • • • 10.5A, 400V, RDS(on) = 0.53Ω @VGS = 10 V Low gate charge ( typical 30nC) Fast switching 100% avalanche tested Improved dv/dt capability { D ● ◀ ▲ {G G DS TO-220 ● ● TO-220F GD S {S Absolute Maximum Ratings Symbol VDSS ID TC = 25°Cunless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current TSP740M - Continuous (TC = 100°C) IDM Drain Current - Pulsed TSF740M Units V 10.5 10.5* A 6.6 6.6 * A 42 42 * A 400 (Note 1) VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 378 mJ EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 13.9 4.5 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 139 1.11 45.5 0.36 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case TSP740M 0.90 TSF740M 2.75 Units °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W 代理销售:深圳德江源电子有限公司 0755-82966416 15989331311 TSP740M / TSF740M Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 400 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C 1 µA IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- VDS = 320 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.43 0.53 Ω On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.25 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 870 -- pF -- 250 -- pF -- 85 -- pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200 V, ID = 10.5A, RG = 25 Ω (Note 4, 5) VDS = 320 V, ID = 10.5 A, VGS = 10 V (Note 4, 5) -- 15 -- ns -- 90 -- ns -- 80 -- ns -- 80 -- ns -- 30 - nC -- 4.0 -- nC -- 15 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10.5 A ISM -- -- 42.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10.5 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 300 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 10.5 A, dIF / dt = 100 A/µs -- 2.5 -- µC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6 mH, IAS = 10.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 10.5 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 代理销售:深圳德江源电子有限公司 0755-82966416 15989331311 Typical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 代理销售:深圳德江源电子有限公司 0755-82966416 15989331311 Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for TSP740M Figure 8. On-Resistance Variation vs Temperature Figure 9-2. Maximum Safe Operating Area for TSF740M Figure 10. Maximum Drain Current vs Case Temperature 代理销售:深圳德江源电子有限公司 0755-82966416 15989331311 Typical Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for TSP740M Figure 11-2. Transient Thermal Response Curve for TSF740M 代理销售:深圳德江源电子有限公司 0755-82966416 15989331311 Gate Charge Test Circuit & Waveform VGS SameType asDUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms V D S R L V D S 9 0 % V D D V G S R G 1 0 % V G S D U T 1 0 V td (o n ) tr td (o ff) to n tf to ff Unclamped Inductive Switching Test Circuit & Waveforms B V D S S 1 E IAS2 -------------------A S=---- L 2 B V D S S-V D D L V D S B V D S S IAS ID R G V D D D U T 1 0 V tp ID(t) V D S(t) V D D tp T im e 代理销售:深圳德江源电子有限公司 0755-82966416 15989331311 Peak Diode Recovery dv/dt Test Circuit & Waveforms + D U T V D S _ I S D L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as D U T V D D • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a te P u ls e W id th D = -------------------------G a t e P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I S D d i/d t ( D U T ) IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( D U T ) B o d y D io d e R e c o v e r y d v / d t V S D V D D B o d y D io d e F o r w a r d V o lt a g e D r o p 代理销售:深圳德江源电子有限公司 0755-82966416 15989331311