NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13003 █ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＩＣＡＴＩＯＮＳ High Speed Switching. Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature…………………………………150℃ P C ——Collector Dissipation…………………………………40W VCBO ——Collector-Base Voltage………………………………700V VCEO ——Collector-Emitter Voltage……………………………400V 1―Base，B VE B O —— Emitter - Base Voltage………………………………9 V ２―Collector，C ３― Emitter，E I—— C Collector Current……………………………………1 . 5 A IB——Base Curren………………………………………………0.75A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO Characteristics Collector-Emitter Breakdown Voltage Min Typ Max Unit ４００ １０ Ｖ Test Conditions IC=5mA, IB=0 IEBO Emitter-Base Cut-off Current HFE1 DC Current Gain １０ ４０ VCE=5V, IC=0.5A HFE2 DC Current Gain ５ VCE=2V, IC=1A VCE(sat)1 Collector- Emitter Saturation Voltage ０．５ Ｖ IC=0.5A, IB =0.1A VCE(sat)2 Collector- Emitter Saturation Voltage １ Ｖ IC=1A, IB =0.25A VCE(sat)3 Collector- Emitter Saturation Voltage ３ Ｖ IC=1.5A, IB =0.5A VBE(sat)1 Base-Emitter Saturation Voltage １ Ｖ IC=0.5A, IB=0.1A VBE(sat)2 Base-Emitter Saturation Voltage １．２ Ｖ IC=1A, IB=0.25A fT tON Current Gain-Bandwidth Product Turn On Time ４ ＭＨｚ VCE =10V,IC=0.1A VCC=125V, IC=1A, １．１ μs tSTG Storage Time ４．０ μs ０．７ μs tF Fall Time μＡ VEB=9V, IC=0 IB1 =0.2A,IB2 =-0.2A RL=125Ω █ hFE Classification H1 H2 H3 H4 H5 10-16 14-21 19-26 24-31 29-40