New Product Si3451DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.8 0.205 at VGS = - 2.5 V - 2.1 • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg tested Qg (Typ) 3.2 nC RoHS COMPLIANT TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G Marking Code 3 AD 4 XXX Lot Traceability and Date Code Part # Code 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET Ordering Information: Si3451DV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Limit - 20 ± 12 - 2.8 - 2.3 Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range V - 2.6b, c - 2.1b, c - 10 - 1.76 IDM Continuous Source-Drain Diode Current Unit IS A - 1.04b, c 2.1 1.3 PD W 1.25b, c 0.8b, c - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter b, d Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Symbol RthJA RthJF Typical Maximum Unit 75 70 100 85 °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 120 °C/W. Document Number: 73701 S-71597-Rev. B, 30-Jul-07 www.vishay.com 1 New Product Si3451DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = - 250 µA - 20 Typ Max Unit Static Drain-Source Breakdown Voltage ΔVDS /TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th) /TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS , ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg tr td(off) Turn-Off Delay Time - 1.5 V ± 100 nA -1 - 10 VDS ≥ - 5 V, VGS = - 4.5 V µA A - 10 VGS = - 4.5 V, ID = - 2.6 A 0.092 0.115 VGS = - 2.5 V, ID = - 1.9 A 0.164 0.205 VDS = - 10 V, ID = - 2.6 A 5.5 Ω S 250 VDS = - 10 V, VGS = 0 V, f = 1 MHz 80 pF 55 VDS = - 10 V, VGS = - 4.5 V, ID = - 2.6 A 3.4 5.1 3.2 5 0.5 nC 1.4 f = 1 MHz 8.5 13 9 14 VDD = - 10 V, RL = 4.76 Ω ID ≅ - 2.1 A, VGEN = - 4.5 V, Rg = 1 Ω 30 45 32 48 16 24 tf Fall Time - 0.6 VDS = - 20 V, VGS = 0 V td(on) Rise Time mV/°C 2.1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C VDS = - 10 V, VGS = - 5.0 V, ID = - 2.6 A Turn-on Delay Time V - 16.7 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C - 1.7 - 10 IS = - 2.1 A A - 0.8 - 1.2 Body Diode Reverse Recovery Time trr 17 26 ns Body Diode Reverse Recovery Charge Qrr 5 6 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 2.1 A, di/dt = 100 A/µs, TJ = 25 °C 14 V ns 3 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73701 S-71597-Rev. B, 30-Jul-07 New Product Si3451DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 10 5 8 I D - Drain Current (A) I D - Drain Current (A) VGS = 5 thru 3 V VGS = 2.5 V 6 4 VGS = 2 V 2 4 3 2 TC = 25 °C 1 TC = 125 °C VGS = 1.5 V 0 0 1 2 3 TC = - 55 °C 0 0.0 4 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 500 0.30 0.25 VGS = 2.5 V 400 C - Capacitance (pF) rDS(on) - On-Resistance ( ) 1.0 0.20 0.15 VGS = 4.5 V 0.10 300 Ciss 200 Coss 100 0.05 Crss 0 0.00 0 2 4 6 8 0 10 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 5 ID = 2.8 A 1.4 4 3 rDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 12 VGS = 10 V VGS = 16 V 2 VGS = 4.5 V, ID = 2.6 A 1.2 VGS = 2.5 V, ID = 1.9 A 1.0 0.8 1 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73701 S-71597-Rev. B, 30-Jul-07 4 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si3451DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 0.36 rDS(on) - Drain-to-Source On-Resistance ( ) I S - Source Current (A) 10 TA = 150 °C TA = 25 °C 1 ID = 2.6 A 0.28 0.20 TA = 125 °C 0.12 TA = 25 °C 0.1 0.00 0.04 0.2 0.4 0.6 0.8 1.0 1.2 1 2 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.2 8 1.1 6 ID = 250 µA TA = 25 °C Single Pulse Power (W) VGS(th) (V) 1.0 0.9 0.8 4 2 0.7 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 TJ - Temperature (°C) 0.1 1 10 100 600 Time (sec) Threshold Voltage Single Pulse Power 100 *rDS(on) Limited I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 dc 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 *VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 73701 S-71597-Rev. B, 30-Jul-07 New Product Si3451DV Vishay Siliconix 4 2.0 3 1.5 Power ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1.0 0.5 1 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Foot *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73701 S-71597-Rev. B, 30-Jul-07 www.vishay.com 5 New Product Si3451DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73701. www.vishay.com 6 Document Number: 73701 S-71597-Rev. B, 30-Jul-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1