New Product Si1926DL Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 Qg (Typ) • TrenchFET® Power MOSFET • 100 % Rg Tested • ESD Protected: 1800 V RoHS 0.47 COMPLIANT APPLICATIONS • Low Power Load Switch SOT-363 SC-70 (6-LEADS) S1 1 6 D1 D2 D1 G1 D2 5 2 3 4 G2 PD XX YY Marking Code Lot Traceability and Date Code S2 G1 G2 Part # Code S1 S2 N-Channel MOSFET N-Channel MOSFET Top View Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Limit 60 ± 20 0.37 0.30 ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation IS PD TJ, Tstg Operating Junction and Storage Temperature Range V 0.34b, c 0.27b, c 0.65 0.43 IDM Pulsed Drain Current Unit A 0.25b, c 0.51 0.33 0.30b, c 0.20b, c - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 360 300 Maximum 415 350 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 400 °C/W. Document Number: 73684 S-72193-Rev. B, 22-Oct-07 www.vishay.com 1 New Product Si1926DL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 60 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 10 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductance gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C -3 1 2.5 VDS = 60 V, VGS = 0 V 10 100 VDS = ≥ 10 V, VGS = 4.5 V 0.50 VDS = ≥ 7.5 V, VGS = 10 V VGS = 10 V, ID = 0.34 0.65 nA A 1.4 VGS = 4.5 V, ID = 0.23 VDS = 30 V, ID = 0.2 A V ± 150 VDS = 60 V, VGS = 0 V, TJ = 85 °C 3 159 Ω ms 18.5 VDS = 30 V, VGS = 0 V, f = 1 MHz 7.5 pF 4.2 VDS = 30 V, VGS = 10 V, ID = 0.34 VDS = 30 V, VGS = 4.5 V, ID = 0.34 0.9 1.4 0.5 0.75 0.2 nC 0.15 f = 1 MHz td(on) td(off) V 56.7 VDD = 30 V, RL = 100 Ω ID ≅ 0.3 A, VGEN = 10 V, Rg = 1 Ω tf 160 240 6.5 10 12 18 13 22 14 21 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 0.43 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 0.65 IS = 0.3 A IF = 0.6 A, di/dt = 100 A/µs A 0.8 1.2 V 16.5 25 nC 13 20 13.5 ns 3 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73684 S-72193-Rev. B, 22-Oct-07 New Product Si1926DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.7 0.4 VGS = 10 V thru 5 V 0.3 VGS = 4 V 0.5 I D - Drain Current (A) I D - Drain Current (A) 0.6 0.4 0.3 0.2 TC = 25 °C 0.1 VGS = 3 V 0.1 0.0 0.0 0.2 TC = 125 °C TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Curves vs. Temp 3.0 32 24 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 2.5 2.0 VGS = 4.5 V 1.5 VGS = 10 V 1.0 Ciss 16 Coss 8 0.5 Crss 0.0 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10 ID - Drain Current (A) 20 50 60 Capacitance 10 1.6 ID = 0.5 A VGS = 10 V, ID = 0.5 A 8 1.4 VDS = 30 V rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 40 VDS - Drain-Source Voltage (V) On-Resistance vs. Drain Current 6 VDS = 48 V 4 2 0 0.0 30 1.2 VGS = 4.5 V, ID = 0.2 A 1.0 0.8 0.3 0.6 0.9 Qg - Total Gate Charge (nC) Qg - Gate Charge Document Number: 73684 S-72193-Rev. B, 22-Oct-07 1.2 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si1926DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5.0 1000.00 TA = 150 °C rDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 0.5 A TA = 25 °C 100.00 10.00 1.00 0.0 4.0 3.0 TA = 125 °C 2.0 TA = 25 °C 1.0 0.0 0.3 0.6 0.9 1.2 1.5 3 4 5 6 7 8 9 10 100 600 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) rDS(on) vs. VGS vs. Temperature Source-Drain Diode Forward Voltage 2.0 5 1.8 4 3 Power (W) VGS(th) (V) ID = 250 µA 1.6 1.4 2 1.2 1.0 - 50 1 - 25 0 25 50 75 100 125 0 10-3 150 10 -2 10-1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 1 Limited by r DS(on) * I D - Drain Current (A) 10 ms 0.1 100 ms 1s 10 s 0.01 TA = 25 °C Single Pulse DC BVDSS Limited 0.001 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 73684 S-72193-Rev. B, 22-Oct-07 New Product Si1926DL Vishay Siliconix 25 °C, unless otherwise noted 0.5 0.5 0.4 0.4 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 0.3 0.2 0.3 0.2 0.1 0.1 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73684 S-72193-Rev. B, 22-Oct-07 www.vishay.com 5 Si1926DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 °C/W 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10–2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73684. www.vishay.com 6 Document Number: 73684 S-72193-Rev. B, 22-Oct-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1