BCP869 BC869 SOT-89 TRANSISTOR (PNP) FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. BASE 500 mW (Tamb=25℃) -2 A -32 V 2. COLLECTOR 3. EMITTER Operating and storage junction temperature range TJ, Tstg: -65℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-0.1mA, IE=0 -32 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-25V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-10V, IC= -5mA VCE=-1V, IC= -500mA VCE=-1V, IC= -1A 50 100 60 375 hFE(2) VCE=-1V, IC= -500mA 100 160 250 375 VCE(sat) IC=-1A, IB= -100mA DC current gain BC869-16 BC869-25 Collector-emitter saturation voltage Transition frequency DEVICE MARKING fT BC869=CEC WEJ ELECTRONIC CO. BC869-16=CGC VCE=-5V, IC=-10mA f = 100MHz 0.5 40 BC869-25=CHC Http:// www.wej.cn E-mail:[email protected] V MHz