RoHS MMSTA92 MMSTA92 D T ,. L SOT-323 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.3 A Collector-base voltage V(BR)CBO: -310 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol IC N C O Unit: mm unless otherwise specified) O Test R T conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -310 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, IB=0 -305 V V(BR)EBO IE= -100µA, IC=0 -5 V ICBO VCB= -200V, IE=0 -0.25 µA IEBO VEB= -5V, IC=0 -0.1 µA hFE(1) VCE= -10V, IC=- 1 mA 60 hFE(2) VCE= -10V, IC = -10 mA 100 hFE(3) VCE= -10 V, IC= -80 mA 60 Collector-emitter saturation voltage VCE(sat) IC= -20 mA, IB= -2 mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2 mA -0.9 V C E L Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain J E E W Transition frequency fT VCE= -20 V, IC= -10 mA f = 30MHz 50 200 MHz DEVICE MARKING MMSTA92=K3R WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]