MICROSEMI STN1NK60Z

STD1LNK60Z-1
STQ1NK60ZR - STN1NK60Z
N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223
Zener-Protected SuperMESH™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
Pw
STD1LNK60Z-1
600V
<15Ω
0.8A
25W
STQ1NK60ZR
600V
<15Ω
0.3A
3W
STN1NK60Z
600V
<15Ω
0.3A
3.3W
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
■
ESD improved capability
■
New high voltage benchmark
TO-92 (Ammopak)
TO-92
2
1
2
3
SOT-223
Description
3
2
1
IPAK
Internal schematic diagram
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■
Switching application
Order codes
Sales Type
Marking
Package
Packaging
STD1LNK60Z-1
D1LNK60Z
IPAK
TUBE
STQ1NK60ZR
Q1NK60ZR
TO-92
BULK
STQ1NK60ZR-AP
Q1NK60ZR
TO-92
AMMOPAK
STN1NK60Z
1NK60Z
SOT-223
TAPE & REEL
February 2006
Rev 7
1/14
www.st.com
14
Electrical ratings
1
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Electrical ratings
Table 1.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
IPAK
VDS
TO-92
SOT-223
Drain-Source Voltage (V GS = 0)
600
V
VDGR
Drain-Gate Voltage (RGS = 20KΩ)
600
V
VGS
Gate-Source Voltage
± 30
V
ID
Drain Current (continuous) at T C = 25°C
0.8
ID
Drain Current (continuous) at T C=100°C
0.5
0.189
A
Drain Current (pulsed)
3.2
1.2
A
Total Dissipation at T C = 25°C
25
3
3.3
W
0.24
0.25
0.26
W/°C
IDM
(1)
PTOT
Derating Factor
VESD(G-D)
dv/dt(2)
TJ
Tstg
0.3
0.3
A
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
800
V
Peak Diode Recovery voltage slope
4.5
V/ns
-55 to 150
°C
Operating Junction Temperature
Storage Temperature
1. Pulse width limited by safe operating area
2. ISD ≤0.3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS
Table 2.
Thermal resistance
Value
Symbol
Rthj-case
Rthj-a
Rthj-lead
Tl
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
Maximum lead temperature for soldering
purpose
Unit
IPAK
TO-92
SOT-223
5
--
--
°C/W
100
120
37.87(1)
°C/W
--
40
--
°C/W
275
260
°C
Value
Unit
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu
Table 3.
Symbol
2/14
Avalanche data
Parameter
IAR
Avalanche Curent, Repetitive or Noy-Repetitive
(pulse width limited by Tj Max)
0.8
A
EAS
Single pulse avalanche Energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
60
mJ
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test Condictions
V(BR)DSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
IGSS
Gate Body Leakage Current
VGS = ±20V
(VDS = 0)
ID = 1mA, VGS= 0
Typ.
VDS= V GS, ID = 50µA
RDS(on)
Static Drain-Source On
Resistance
VGS= 10V, ID= 0.4A
3
Unit
V
1
50
µA
µA
±10
µA
3.75
4..5
V
13
15
Ω
Typ.
Max.
Unit
VDS = MaxRating @125°C
Gate Threshold Voltage
Max.
600
VDS = Max Rating,
VGS(th)
Table 5.
Min.
Dynamic
Symbol
Parameter
gfs (1)
Forward Transconductance
VDS =15V, ID = 0.4A
0.5
S
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V, f=1 MHz, V GS=0
94
17.6
2.8
pF
pF
pF
VGS=0, V DS =0V to 480V
11
pF
VDD=480V, ID = 0.8A
4.9
1
2.7
Ciss
Coss
Crss
Coss eq(2). Equivalent Output
Capacitance
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Condictions
VGS =10V
(see Figure 11)
Min.
6.9
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS
inceases from 0 to 80% VDSS
Rev 7
3/14
Electrical characteristics
Table 6.
Symbol
td(on)
tr
td(off)
tf
Table 7.
Symbol
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Switching times
Parameter
Test Condictions
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Min.
Typ.
Max.
Unit
5.5
5
13
28
VDD =300 V, ID= 0.4A,
RG=4.7Ω, VGS=10V
(see Figure 19)
ns
ns
ns
ns
Source drain diode
Max
Unit
Source-drain Current
0.8
A
ISDM(1)
Source-drain Current (pulsed)
2.4
A
VSD(2)
Forward on Voltage
ISD=0.8A, VGS=0
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=0.8A,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=0.8A,
ISD
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Test Condictions
Min
di/dt = 100A/µs,
VDD =20V, Tj=25°C
di/dt = 100A/µs,
VDD =20V, Tj=150°C
Typ.
135
216
3.2
ns
nC
A
140
224
3.2
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 8.
Symbol
BVGSO(1)
1.
4/14
Gate-source zener diode
Parameter
Gate-source Braekdown
Voltage
Test Condictions
Igs=±1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for IPAK
Figure 2.
Thermal impedance for IPAK
Figure 3.
Safe operating area for TO-92
Figure 4.
Thermal impedance for TO-92
Figure 5.
Safe operating area for SOT-223
Figure 6.
Thermal impedance for SOT-223
Rev 7
5/14
Electrical characteristics
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Figure 7.
Output characterisics
Figure 8.
Transfer characteristics
Figure 9.
Transconductance
Figure 10. Static drain-source on resistance
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
6/14
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Electrical characteristics
Figure 13. Normalized gate threshold voltage
vs temperature
Figure 14. Normalized on resistance vs
temperature
Figure 15. Source-drain diode forward
characteristics
Figure 16. Normalized BVDSS vs temperature
Figure 17. Maximum avalanche energy vs
temperature
Figure 18. Max Id Current vs Tc
Rev 7
7/14
Test circuit
3
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Test circuit
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
Figure 22. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 23. Unclamped inductive waveform
8/14
Figure 24. Switching time waveform
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Rev 7
9/14
Package mechanical data
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
TO-92 MECHANICAL DATA
mm.
inch
DIM.
MIN.
MAX.
MIN.
TYP.
MAX.
A
4.32
4.95
0.170
0.194
b
0.36
0.51
0.014
0.020
D
4.45
4.95
0.175
0.194
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.094
0.105
0.055
e1
1.14
1.40
0.044
L
12.70
15.49
0.50
0.610
R
2.16
2.41
0.085
0.094
S1
0.92
1.52
0.036
0.060
W
0.41
0.56
0.016
V
10/14
TYP
5°
0.022
5°
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Package mechanical data
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
C
0.45
C2
0.48
D
6
E
6.4
6.6
0.037
0.6
0.017
0.023
0.6
0.019
0.023
6.2
0.236
0.244
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
Rev 7
11/14
Package mechanical data
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
SOT-223 MECHANICAL DATA
mm
DIM.
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a
2.27
2.3
2.33
89.4
90.6
91.7
b
4.57
4.6
4.63
179.9
181.1
182.3
c
0.2
0.4
0.6
7.9
15.7
23.6
d
0.63
0.65
0.67
24.8
25.6
26.4
e1
1.5
1.6
1.7
59.1
63
66.9
e4
0.32
12.6
f
2.9
3
3.1
114.2
118.1
122.1
g
0.67
0.7
0.73
26.4
27.6
28.7
l1
6.7
7
7.3
263.8
275.6
287.4
l2
3.5
3.5
3.7
137.8
137.8
145.7
L
6.3
6.5
6.7
248
255.9
263.8
L
e1
l2
d
a
c
b
e4
f
l1
C
B
C
E
g
P008B
12/14
Rev 7
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
5
Revision history
Revision history
Table 9.
Revision history
Date
Revision
Changes
19-Mar-2003
1
First Release
15-May-2003
2
Removed DPAK
09-Jun-2003
3
Final datasheet
17-Nov-2004
4
Inserted SOT-223
15-Feb-2005
5
Modified Figure 3.
07-Sep-2005
6
Inserted ecopak indication
22-Feb-2006
7
New template
Rev 7
13/14
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14
Rev 7