AOD402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD402 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, laod switching and general purpose applications. Standard Product AOD402 is Pb-free (meets ROHS & Sony 259 specifications). AOD402L is a Green Product ordering option. AOD402 and AOD402L are electrically identical. VDS (V) = 30V ID = 18 A (VGS = 20V) RDS(ON) < 15 mΩ (VGS = 20V) RDS(ON) < 18 mΩ (VGS = 10V) RDS(ON) < 44 mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Maximum 30 Units V ±25 V 18 TC=100°C A ID IDM 12 C IAR 18 A Repetitive avalanche energy L=0.1mH C EAR 40 mJ Pulsed Drain Current Avalanche Current C TC=25°C Power Dissipation B Power Dissipation A TA=25°C Junction and Storage Temperature Range 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 30 PDSM TA=70°C Alpha & Omega Semiconductor, Ltd. 60 PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B 40 RθJA RθJC Typ 16.7 40 1.9 °C Max 25 50 2.5 Units °C/W °C/W °C/W AOD402 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 40 V TJ=55°C VGS=20V, ID=18A 5 2.4 VGS=10V, ID=18A 15 18 VGS=4.5V, ID=6A 36 44 mΩ 1 V 18 A 24 0.8 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge V 15 VDS=5V, ID=18A Rg 3 21 IS=18A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Crss nA 12 Forward Transconductance Output Capacitance 100 17.4 TJ=125°C VSD Coss µA A gFS IS Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=10V, ID=18A mΩ S 769 pF 185 pF 131 pF 0.7 Ω 15.9 nC 2.44 nC Qgd Gate Drain Charge 4.92 nC tD(on) Turn-On DelayTime 6.2 ns 10.9 ns 16 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, ID=18A, RL=0.82Ω, RGEN=3Ω 4.8 ns trr Body Diode Reverse Recovery Time IF=18A, dI/dt=100A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs 8.1 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depend on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 10V 6V 35 25 30 7V 20 20 ID(A) 25 ID (A) VDS=5V 5V 4.5V 15 125°C 15 10 10 VGS=4V 5 25°C 5 3.5V 0 0 0 1 2 3 4 2 5 2.5 60 4 4.5 5 5.5 Normalized On-Resistance 1.8 50 RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 40 VGS=4.5V 30 VGS=10V 20 10 VGS=20V 0 0 5 10 15 20 25 30 1.6 VGS=10V, 18A VGS=20V,18A 1.4 1.2 1 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+02 50 1.0E+01 ID=18A 125°C 1.0E+00 40 IS (A) RDS(ON) (mΩ) 3 30 125°C 20 1.0E-01 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=18A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 800 600 Coss 400 2 200 Crss 0 0 4 8 12 16 0 20 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10 60 TJ(Max)=150°C, TA=25°C 50 1ms Power (W) 0.1s 1s 1.0 10s DC 1 10 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 30 20 0 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 40 10 0.1 0.1 TJ(Max)=150°C TA=25°C 100µs 10ms ID (Amps) 10.0 RDS(ON) limited 30 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000