AOD434 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected to a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 259 specifications). AOD434L is a Green Product ordering option. AOD434 and AOD434L are electrically identical. VDS (V) = 20V ID = 18A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 2.5V) RDS(ON) < 30mΩ (VGS = 1.8V) ESD Rating: 2KV HBM TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=100°C C Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C ±12 V 18 IAR 18 A EAR 37 mJ 30 60 2.5 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.6 TJ, TSTG t ≤ 10s Steady-State Steady-State W 30 PDSM Junction and Storage Temperature Range A ID IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B Units V 18 TC=25°C Pulsed Drain Current Maximum 20 RθJA RθJC Typ 16.7 40 1.9 °C Max 25 50 2.5 Units °C/W °C/W °C/W AOD434 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time V A 12.6 16 mΩ VGS=2.5V, ID=10A 16.5 21 mΩ VGS=1.8V, ID=5A 23.2 30 mΩ VDS=5V, ID=18A 36 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 1 VGS=4.5V, ID=15A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Gate resistance 0.75 14 Forward Transconductance Rg V 18 VSD Crss µA 10.9 gFS Output Capacitance µA 14.3 TJ=125°C Coss 5 10 VGS=10V, ID=18A IS Units V VDS=16V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=10V, ID=18A 0.73 mΩ S 1 V 18 A 1810 pF 232 pF 200 pF 1.6 Ω 40.1 nC 8.9 1.7 nC Gate Drain Charge 6.2 nC Turn-On DelayTime 4 ns VGS=10V, VDS=10V, RL=0.56Ω, RGEN=3Ω 15 ns 42.2 ns 18.2 ns trr Body Diode Reverse Recovery Time IF=18A, dI/dt=100A/µs 23.2 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs 4.9 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev 3 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10 35 30 2.5V 4.5V VDS=5V 2V 25 30 20 ID(A) ID (A) 25 20 15 15 10 125°C 10 VGS=1.5V 5 5 25°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 30 1.8 Normalized On-Resistance VGS=1.8V 25 RDS(ON) (mΩ) 2.5 20 VGS=2.5V 15 VGS=4.5V 10 VGS=10V VGS=4.5V ID=18A VGS=2.5V 1.6 1.4 VGS=10V VGS=1.8V 1.2 1 5 0 5 10 15 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 35 30 1.0E+01 ID=18A 1.0E+00 25 125°C 20 IS (A) RDS(ON) (mΩ) 25 125°C 25°C 1.0E-01 1.0E-02 15 1.0E-03 25°C 10 1.0E-04 5 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 1.4 AOD434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 5 VDS=10V ID=18A 2500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 2000 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 TJ(Max)=150°C TA=25°C 40 RDS(ON) limited 1ms 1s 1.0 100µs 10ms 0.1s 10s 30 20 DC TJ(Max)=150°C TA=25°C 10 0 0.001 0.1 0.1 1 10 100 VDS (Volts) 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 15 50 Power (W) ID (Amps) 100.0 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. T 100 1000