AOSMD AOD434L

AOD434
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD434 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected to
a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 259 specifications).
AOD434L is a Green Product ordering option.
AOD434 and AOD434L are electrically identical.
VDS (V) = 20V
ID = 18A (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 4.5V)
RDS(ON) < 21mΩ (VGS = 2.5V)
RDS(ON) < 30mΩ (VGS = 1.8V)
ESD Rating: 2KV HBM
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=100°C
C
Avalanche Current C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation
B
TC=100°C
Power Dissipation
A
TA=70°C
±12
V
18
IAR
18
A
EAR
37
mJ
30
60
2.5
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.6
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
W
30
PDSM
Junction and Storage Temperature Range
A
ID
IDM
PD
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case B
Units
V
18
TC=25°C
Pulsed Drain Current
Maximum
20
RθJA
RθJC
Typ
16.7
40
1.9
°C
Max
25
50
2.5
Units
°C/W
°C/W
°C/W
AOD434
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
TJ=55°C
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
V
A
12.6
16
mΩ
VGS=2.5V, ID=10A
16.5
21
mΩ
VGS=1.8V, ID=5A
23.2
30
mΩ
VDS=5V, ID=18A
36
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
1
VGS=4.5V, ID=15A
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Gate resistance
0.75
14
Forward Transconductance
Rg
V
18
VSD
Crss
µA
10.9
gFS
Output Capacitance
µA
14.3
TJ=125°C
Coss
5
10
VGS=10V, ID=18A
IS
Units
V
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
IDSS
RDS(ON)
Typ
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=10V, ID=18A
0.73
mΩ
S
1
V
18
A
1810
pF
232
pF
200
pF
1.6
Ω
40.1
nC
8.9
1.7
nC
Gate Drain Charge
6.2
nC
Turn-On DelayTime
4
ns
VGS=10V, VDS=10V, RL=0.56Ω,
RGEN=3Ω
15
ns
42.2
ns
18.2
ns
trr
Body Diode Reverse Recovery Time
IF=18A, dI/dt=100A/µs
23.2
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
4.9
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev 3 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10
35
30
2.5V
4.5V
VDS=5V
2V
25
30
20
ID(A)
ID (A)
25
20
15
15
10
125°C
10
VGS=1.5V
5
5
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
30
1.8
Normalized On-Resistance
VGS=1.8V
25
RDS(ON) (mΩ)
2.5
20
VGS=2.5V
15
VGS=4.5V
10
VGS=10V
VGS=4.5V
ID=18A
VGS=2.5V
1.6
1.4
VGS=10V
VGS=1.8V
1.2
1
5
0
5
10
15
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
35
30
1.0E+01
ID=18A
1.0E+00
25
125°C
20
IS (A)
RDS(ON) (mΩ)
25
125°C
25°C
1.0E-01
1.0E-02
15
1.0E-03
25°C
10
1.0E-04
5
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.4
AOD434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
5
VDS=10V
ID=18A
2500
Capacitance (pF)
VGS (Volts)
4
3
2
1
Ciss
2000
1500
1000
Coss
500
Crss
0
0
0
5
10
15
20
25
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
TJ(Max)=150°C
TA=25°C
40
RDS(ON)
limited
1ms
1s
1.0
100µs
10ms
0.1s
10s
30
20
DC
TJ(Max)=150°C
TA=25°C
10
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
10
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
15
50
Power (W)
ID (Amps)
100.0
10.0
10
VDS (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
T
100
1000