Rev 3: Sept 2004 AOD405, AOD405L (Green Product) P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. AOD405L (Green Product) is offered in a lead-free package. VDS (V) = -30V ID = -18A RDS(ON) < 32mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TA=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C V A -18 IAR -18 A EAR 40 mJ -40 60 2.5 W 1.6 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 30 PDSM Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 ID IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C Units V -18 TA=100°C G Repetitive avalanche energy L=0.1mH Maximum -30 RθJA RθJL Typ 16.7 40 1.9 Max 25 50 2.5 Units °C/W °C/W °C/W AOD405, AOD405L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 VDS=-24V, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-10A gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-18A DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) -1 -2 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-18A -2.4 µA nA V A 24.5 32 36 43 41 60 mΩ -1 V -18 A 1100 pF 17 -0.76 920 VGS=0V, VDS=-15V, f=1MHz Units V ±100 VGS=-10V, ID=-18A Output Capacitance -0.003 -5 VGS(th) Coss Max TJ=55°C IGSS IS Typ mΩ S 190 pF 122 pF 3.6 4.5 Ω 18.7 23 nC 9.7 11.7 nC Qgs Gate Source Charge Qgd Gate Drain Charge 5.4 tD(on) Turn-On DelayTime 9 13 ns 25 35 ns 20 30 ns 12 18 ns 21.4 26 16 ns nC VGS=-10V, VDS=-15V, RL=0.82Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/µs IF=-18A, dI/dt=100A/µs 2.54 13 nC nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD405, AOD405L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V -6V -5V 25 VDS=-5V 25 20 20 -4V -ID(A) -ID (A) 30 -4.5V 15 -3.5V 10 5 15 10 125°C 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 VGS=-4.5V VGS=-10V 2 2.5 3 3.5 4 4.5 5 VGS=-4.5V 1.40 ID=-10A VGS=-10V 1.20 ID=-18A 1.00 0.80 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 100 90 ID=-18A 80 1.0E+00 1.0E-01 60 125°C 50 -IS (A) 70 RDS(ON) (mΩ) 1.5 1.60 Normalized On-Resistance RDS(ON) (mΩ) 70 65 60 55 50 45 40 35 30 25 20 15 10 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 125°C 1.0E-02 1.0E-03 40 30 25°C 20 1.0E-04 25°C 1.0E-05 10 1.0E-06 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD405, AOD405L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 1.00E+01 VDS=-15V ID=-18A 1250 Capacitance (pF) -VGS (Volts) 8.00E+00 6.00E+00 4.00E+00 2.00E+00 Ciss 1000 750 500 Coss 0.00E+00 0 0 4 8 12 16 20 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs RDS(ON) 10.0 limited 1ms 1s 1 25 30 TJ(Max)=150°C TA=25°C 20 10 DC 0.1 0.1 20 30 100µs 10ms 0.1s 10s 15 40 TJ(Max)=150°C, TA=25°C 1.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 Crss 250 10 0 0.001 100 -VDS (Volts) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000