TPS22903 www.ti.com ............................................................................................................................................................................................ SLVS827 – FEBRUARY 2009 ULTRA-SMALL LOW-INPUT-VOLTAGE LOW rON LOAD SWITCH FEATURES APPLICATIONS • • • • • • • • • 1 • • • • • • • Input Voltage: 1.1 V to 3.6 V Ultra-Low ON-State Resistance – rON = 66 mΩ at VIN = 3.6 V – rON = 75 mΩ at VIN = 2.5 V – rON = 90 mΩ at VIN = 1.8 V – rON = 135 mΩ at VIN = 1.2 V 500-mA Maximum Continuous Switch Current Quiescent Current < 1 µA Shutdown Current < 1 µA Low Control Input Threshold Enables Use of 1.2-V/1.8-V/2.5-V/3.3-V Logic Controlled Slew Rate (5 µs Max at 3.6 V) ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) 4-Terminal Wafer Chip-Scale Package (WCSP) – 0.8 mm × 0.8 mm, 0.4-mm Pitch, 0.5-mm Height PDAs Cell Phones GPS Devices MP3 Players Digital Cameras Peripheral Ports Portable Instrumentation YFP PACKAGE B B A A 2 1 Laser Marking View 1 2 Bump View TERMINAL ASSIGNMENTS B GND ON A VOUT VIN 2 1 DESCRIPTION TPS22903 is an ultra-small, low rON dual load switch with controlled turn on. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.1 V to 3.6 V. The switch is controlled by an on/off input (ON), which is capable of interfacing directly with low-voltage control signals. TPS22903 is available in a space-saving 4-terminal WCSP 0.4-mm pitch (YFP). The device is characterized for operation over the free-air temperature range of –40°C to 85°C. FEATURE LIST (1) DEVICE rON TYPICAL AT 3.6 V SLEW RATE AT 3.6 V QUICK OUTPUT DISCHARGE (1) MAXIMUM OUTPUT CURRENT ENABLE TPS22903 69 mΩ 5 µs max No 500 mA Active high This feature discharges the output of the switch to ground through a 120-Ω resistor, preventing the output from floating. ORDERING INFORMATION TA –40°C to 85°C (1) (2) (3) PACKAGE (1) (2) WCSP – YFP (0.4-mm pitch) ORDERABLE PART NUMBER Tape and reel TPS22903YFPR TOP-SIDE MARKING (3) _ _ _4P_ Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character to designate the wafer fab/assembly site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free). 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009, Texas Instruments Incorporated TPS22903 SLVS827 – FEBRUARY 2009 ............................................................................................................................................................................................ www.ti.com BLOCK DIAGRAM VIN A1 Turn-On Slew Rate Controlled Driver ON Control Logic B1 ESD Protection A2 VOUT B2 GND Figure 1. Functional Block Diagram FUNCTION TABLE ON (CONTROL INPUT) VIN TO VOUT L OFF H ON TERMINAL FUNCTIONS TERMINAL 2 I/O DESCRIPTION BALL NO. NAME A1 VIN I Input of the switch, bypass this input with a ceramic capacitor to ground A2 VOUT O Output of the switch B1 ON I Switch control input, active high, do not leave floating B2 GND – Ground Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS22903 TPS22903 www.ti.com ............................................................................................................................................................................................ SLVS827 – FEBRUARY 2009 ABSOLUTE MAXIMUM RATINGS (1) MIN VIN Input voltage range VOUT Output voltage range VON Input voltage range PD Power dissipation at TA = 25°C IMAX Maximum continuous switch current TA Operating free-air temperature range Tstg Storage temperature range Tlead Maximum lead temperature (10-s soldering time) ESD (1) MAX –0.3 4 V VIN + 0.3 V 4 V 0.48 W –0.3 Electrostatic discharge protection UNIT 0.5 A –40 85 °C –65 150 °C 300 °C Human-Body Model (HBM) 2000 Charged Device Model (CDM) 1000 V Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. THERMAL IMPEDANCE RATINGS θJA (1) Package thermal impedance (1) TYP UNIT 205 °C/W MIN MAX UNIT 1.1 3.6 V VIN V 3.6 V YFP package The package thermal impedance is calculated in accordance with JESD 51-7. RECOMMENDED OPERATING CONDITIONS VIN Input voltage range VOUT Output voltage range VIH High-level input voltage, ON VIL Low-level input voltage, ON CIN Input capacitor (1) (1) 0.85 0.4 1 V µF See Application Information Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS22903 3 TPS22903 SLVS827 – FEBRUARY 2009 ............................................................................................................................................................................................ www.ti.com ELECTRICAL CHARACTERISTICS VIN = 1.1 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS TA MIN TYP (1) MAX UNIT IIN Quiescent current IOUT = 0, VIN = VON Full 1 µA IIN(OFF) OFF-state supply current VON = GND, OUT = Open Full 1 µA IIN(LEAKAGE) OFF-state switch current VON = GND, VOUT = 0 1 µA Full VIN = 3.6 V VIN = 2.5 V rON ON-state resistance IOUT = –200 mA VIN = 1.8 V VIN = 1.2 V VIN = 1.1 V ION (1) ON-state input leakage current VON = 1.1 V to 3.6 V or GND 25°C 66 Full 25°C 95 75 Full 25°C 90 115 125 135 Full 25°C 95 110 Full 25°C 90 mΩ 175 185 157 275 Full 300 Full 1 µA Typical values are at VIN = 3.3 V and TA = 25°C. SWITCHING CHARACTERISTICS VIN = 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP (1) MAX 0.9 1.5 µs UNIT tON Turn-ON time IOUT = 100 mA, CL = 0.1 µF tOFF Turn-OFF time IOUT = 100 mA, CL = 0.1 µF 5.8 8 µs tr VOUT rise time IOUT = 100 mA, CL = 0.1 µF 0.80 5 µs tf VOUT fall time IOUT = 100 mA, CL = 0.1 µF 8.3 10 µs (1) 4 Typical values are at TA = 25°C. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS22903 TPS22903 www.ti.com ............................................................................................................................................................................................ SLVS827 – FEBRUARY 2009 TYPICAL CHARACTERISTICS 1.0 0.9 0.8 ON-State Resistance, rON (Ω) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 Input Voltage, VIN (V) Figure 2. rON vs VIN 100 90 80 W Voltage Drop (mV) 70 Vdrop = 1.0 V 60 Vdrop = 1.2 V 50 Vdrop = 1.8 V Vdrop = 2.5 V 40 Vdrop = 3.3 V 30 20 10 0 0.00 0.05 Temperature (°C) Figure 3. rON vs Temperature (VIN = 3.3 V) 0.10 0.15 0.20 0.25 0.30 Load Current (A) 0.35 0.40 0.45 Figure 4. Voltage Drop vs Load Current Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS22903 0.50 5 TPS22903 SLVS827 – FEBRUARY 2009 ............................................................................................................................................................................................ www.ti.com TYPICAL CHARACTERISTICS (continued) 200 250 180 200 Quiescent Current, IIN (nA) Quiescent Current, IIN (nA) 160 140 150 120 100 100 80 60 50 40 20 0 0.5 0 1.0 1.5 2.0 2.5 3.0 Input Voltage, VIN(V) 3.5 –40 4.0 Figure 5. Quiescent Current vs VIN (VON = VIN, IOUT = 0) 25 Temperature(°C) 85 Figure 6. Quiescent Current vs Temperature (VIN = 3.3 V, IOUT = 0) 120 250 225 200 100 IIN(OFF) Current (nA) IIN(OFF) Current (nA) 175 80 60 150 125 100 75 40 50 20 0 0.5 25 0 1.0 1.5 2.0 2.5 Input Voltage, VIN(V) 3.0 3.5 Figure 7. IIN(OFF) vs VIN (VON = 0 V) 6 4.0 –40 25 Temperature(°C) 85 Figure 8. IIN(OFF) vs Temperature (VIN = 3.3 V) Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS22903 TPS22903 www.ti.com ............................................................................................................................................................................................ SLVS827 – FEBRUARY 2009 TYPICAL CHARACTERISTICS (continued) 250 120 225 200 IIN (Leakage) Current (nA) IIN (Leakage) Current (nA) 100 80 60 40 175 150 125 100 75 50 20 25 0 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 –40 4.0 25 85 Temperature (°C) Input Voltage, VIN (V) Figure 9. IIN(Leakage) vs VIN (IOUT = 0) Figure 10. IIN (Leakage) vs Temperature (VIN = 3.3 V) 4.0 VIN = 3.6 V 3.5 VIN = 3.3 V 3.0 VIN = 3 V VIN = 2.5 V VOUT (V) 2.5 2.0 VIN = 1.8 V VIN = 1.5 V 1.5 VIN = 1.2 V 1.0 VIN = 1.1 V 0.5 0.0 –0.5 0.3 0.4 0.5 0.6 Input Voltage, VON (V) 0.7 0.8 Figure 11. ON-Input Threshold Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS22903 7 TPS22903 SLVS827 – FEBRUARY 2009 ............................................................................................................................................................................................ www.ti.com TYPICAL CHARACTERISTICS (continued) 7 6.0 5.5 tfall 6 tOFF 5.0 4.5 5 tON/tOFF (ms) tIrise /tfall (ms) 4.0 4 CL = 0.1 µF IL = 100 mA 3 3.5 3.0 CL = 0.1 µF IL = 100 mA 2.5 2.0 2 1.5 trise 1 tON 1.0 0.5 0 –40 –20 0 20 40 60 80 100 0.0 –40 –20 Figure 12. trise/tfall vs Temperature (VIN = 3.3 V) VON 200 mV/DIV 20 40 60 80 100 Figure 13. tON/tOFF vs Temperature (VIN = 3.3 V) VON 200 mV/DIV CL= 0.1 mF IOUT = 100 mA VIN = 1.2 V IOUT 20 mA/DIV CL= 10 mF IOUT = 100 mA VIN = 1.2 V IOUT 20 mA/DIV 5 ms/DIV 20 ms/DIV Figure 14. tON Response 8 0 Temperature (°C) Temperature (°C) Figure 15. tON Response Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS22903 TPS22903 www.ti.com ............................................................................................................................................................................................ SLVS827 – FEBRUARY 2009 TYPICAL CHARACTERISTICS (continued) VON 200 mV/DIV VON 200 mV/DIV CL= 0.1 mF IOUT = 100 mA VIN = 3.3 V IOUT 20 mA/DIV CL= 10 mF IOUT = 100 mA VIN = 3.3 V IOUT 20 mA/DIV 5 ms/DIV 20 ms/DIV Figure 16. tON Response Figure 17. tON Response CL= 0.1 mF IOUT = 100 mA VIN = 1.2 V CL= 10 mF IOUT = 100 mA VIN = 1.2 V VON 200 mV/DIV VON 200 mV/DIV IOUT 20 mA/DIV IOUT 20 mA/DIV 2 ms/DIV 100 ms/DIV Figure 18. tOFF Response Figure 19. tOFF Response CL= 0.1 mF IOUT = 100 mA VIN = 3.3 V CL= 10 mF IOUT = 100 mA VIN = 3.3 V VON 200 mV/DIV VON 200 mV/DIV IOUT 20 mA/DIV IOUT 20 mA/DIV 5 ms/DIV 200 ms/DIV Figure 20. tOFF Response Figure 21. tOFF Response Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS22903 9 TPS22903 SLVS827 – FEBRUARY 2009 ............................................................................................................................................................................................ www.ti.com PARAMETER MEASUREMENT INFORMATION VIN ON VOUT (A) RL CL + – TPS22903 OFF CIN =10 x CL GND GND GND TEST CIRCUIT 1.8 V VON VON VON/2 VON/2 tr 0V tON tOFF VOUT/2 VOUT/2 90% VOUT VOH VOUT tf 0V 10% 90% 10% VOL tON/tOFF WAVEFORMS A. trise and tfall of the control signal is 100 ns. Figure 22. Test Circuit and tON/tOFF Waveforms 10 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS22903 TPS22903 www.ti.com ............................................................................................................................................................................................ SLVS827 – FEBRUARY 2009 APPLICATION INFORMATION ON/OFF Control The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state as there is no fault. ON is active-high and has a low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard GPIO logic thresholds. It can be used with any microcontroller with 1.2-V, 1.8-V, 2.5-V, or 3.3-V GPIOs. Input Capacitor To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-µF ceramic capacitor, CIN, placed close to the pins, is usually sufficient. Higher values of CIN can be used to further reduce the voltage drop during high-current application. When switching heavy loads, it is recommended to have an input capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop. Output Capacitor Due to the integral body diode in the PMOS switch, a CIN greater than CL is highly recommended. A CL greater than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow through the body diode from VOUT to VIN. Board Layout For best performance, all traces should be as short as possible. To be most effective, the input and output capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects along with minimizing the case-to-ambient thermal impedance. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS22903 11 PACKAGE OPTION ADDENDUM www.ti.com 17-Mar-2009 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing TPS22903YFPR ACTIVE DSBGA YFP Pins Package Eco Plan (2) Qty 4 3000 Green (RoHS & no Sb/Br) Lead/Ball Finish SNAGCU MSL Peak Temp (3) Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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