Inchange Semiconductor Product Specification 2N5050 2N5051 2N5052 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage ・Excellent safe operating area APPLICATIONS ・Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 体 导 电半 Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER 固 CONDITIONS 2N5050 Collector-base voltage 2N5051 2N5052 VCEO VEBO A H C IN Collector-emitter voltage 2N5051 N O C EMI Open emitter Open base 2N5052 Emitter-base voltage UNIT 125 NG S 2N5050 R O T DUC VALUE 150 V 200 125 150 V 200 Open collector 7 V 2 A 40 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 7.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5050 2N5051 2N5052 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5050 VCEO(SUS) Collector-emitter sustaining voltage 2N5051 MIN TYP. MAX UNIT 125 IC=0.1A ;IB=0 2N5052 V 150 200 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.5A 1.2 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.5A 1.5 V Base-emitter on voltage IC=750mA ; VCE=5V 1.2 V 5.0 mA VBE 2N4910 ICEO ICBO 体 导 电半 Collector cut-off current 固 Collector cut-off current VCE=125V; IB=0 2N4911 VCE=150V; IB=0 2N4912 VCE=200V; IB=0 N O C EMI VCB=Rated VCBO; IE=0 S G N HA IEBO Emitter cut-off current hFE DC current gain IC=750mA ; VCE=5V Transition frequency IC=500mA;VCE=10V;f=1MHz fT INC R O T DUC VEB=7V; IC=0 2 25 0.1 mA 1.0 mA 100 10 MHz Inchange Semiconductor Product Specification 2N5050 2N5051 2N5052 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA Fig.2 outline dimensions 3 R O T DUC