Inchange Semiconductor Product Specification 2N6262 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 电半 固 Absolute maximum ratings(Ta=℃) SYMBOL N O C EMI PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector S G N A INCH R O T DUC VALUE UNIT 170 V 150 V 5 V 10 A 150 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6262 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat Collector-emitter saturation voltge IC=5A ;IB=0.5A 2.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 3.5 V VBE Base-emitter on voltage IC=3A ; VCE=2V 1.8 V ICEO Collector cut-off current VCE=100V; IB=0 1.0 mA ICEV Collector cut-off current VCE=150V; VBE(off)=1.5V TC=150℃ 0.1 5.0 mA ICBO Emitter cut-off current VCB=150V; IE=0 0.1 mA 0.1 mA IEBO hFE fT 体 导 电半 固 CONDITIONS Emitter cut-off current VEB=5V; IC=0 DC current gain IC=3A ; VCE=2V Transition frequency IC=1A;VCE=10V N O C EMI INC S G N HA 2 MIN TYP. MAX 150 V R O T DUC 20 0.8 UNIT 70 MHz Inchange Semiconductor Product Specification 2N6262 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA R O T DUC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3