Inchange Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6467 2N6468 APPLICATIONS ・For use in audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6465 VCBO Collector-base voltage 100 Open base 2N6466 VEBO V 130 2N6465 Collector-emitter voltage Emitter-base voltage UNIT 110 Open emitter 2N6466 VCEO VALUE V 120 Open collector 5 V 4 A 40 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6465 VCEO(SUS) Collector-emitter sustaining voltage VBE ICEO UNIT V 120 Collector-emitter saturation voltage IC=1.5A; IB=0.15A 1.2 V Base-emitter on voltage IC=1.5A ; VCE=4V 1.5 V 10 μA 100 μA 10 μA VCB=110V; IE=0 Collector cut-off current 2N6466 VCB=130V; IE=0 2N6465 VCE= 100V,IB=0 Collector cut-off current 2N6466 VCE= 120V,IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1.5A ; VCE=4V 15 Transition frequency IC=0.5A ; VCE=10V 5 fT MAX IC=50mA ;IB=0 2N6465 ICBO TYP. 100 2N6466 VCEsat MIN 2 150 MHz Inchange Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3