ISC 2N5626

Inchange Semiconductor
Product Specification
2N5622 2N5624 2N5626 2N5628
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Excellent safe operating area
・Low collector saturation voltage
APPLICATIONS
・For audio and general-purpose
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
导体
半
电
固
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VCEO
EMIC
S
E
G
N
2N5622
VCBO
Collector-base voltage
A
H
C
IN
Collector-emitter voltage
OND
2N5624/5626
Open emitter
VALUE
100
120
2N5622
60
2N5624/5626
Open base
Emitter-base voltage
UNIT
80
2N5628
2N5628
VEBO
R
O
T
UC
80
V
V
100
Open collector
5
V
10
A
100
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5622 2N5624 2N5626 2N5628
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5622
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5624/5626
TYP.
MAX
UNIT
60
IC=50mA ;IB=0
V
80
100
2N5628
VCEsat
MIN
Collector-emitter saturation voltage
IC=10A; IB=1A
1.5
V
VBE
Base-emitter on voltage
IC=5A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
导体
半
电
2N5622/5626
hFE
DC current gain
固
70
D
N
O
IC
30
M
E
S
GE
2N5622/5626
fT
Transition frequency
N
A
H
INC
R
O
T
UC
IC=5A ; VCE=5V
2N5624/5628
2
90
40
IC=1A ; VCE=12V
2N5624/5628
200
30
MHz
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5622 2N5624 2N5626 2N5628
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 outline dimensions
3