Inchange Semiconductor Product Specification 2N6302 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain @IC=8A APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 5 A PT Total power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W Tc=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6302 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=4A 2.0 V Base-emitter saturation voltage IC=10A; IB=1A 1.8 V VBE Base-emitter on voltage IC=8A ; VCE=4V 1.5 V ICEV Collector cut-off current VCE=140V; VBE=-1.5V TC=150℃ 1.0 5.0 mA ICBO Collector cut-off current VCB=140V; IE=0 1.0 mA ICEO Collector cut-off current VCE=70V; IB=0 2.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=8A ; VCE=4V 15 hFE -2 DC current gain IC=16A ; VCE=4V 4 Transition frequency IC=1A ; VCE=10V;f=1MHz VBEsat fT 2 140 UNIT 0.2 V 60 MHz Inchange Semiconductor Product Specification 2N6302 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3