Inchange Semiconductor Product Specification 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain@IC=8A ・Low collector saturation voltage APPLICATIONS ・For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 5.0 A PD Total Power Dissipation 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5631 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=4A 2.0 V Base-emitter saturation voltage IC=10A; IB=1A 1.8 V VBE Base-emitter on voltage IC=8A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 2.0 mA ICEO Collector cut-off current VCE=70V; IB=0 2.0 mA ICEX Collector cut-off current VCE=ratedVCB ;VBE(off)=1.5V TC=150℃ 2.0 7.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=8A ; VCE=2V 15 hFE-2 DC current gain IC=16A ; VCE=2V 4 COB Output capacitance IE=0 ; VCB=10V ;f=0.1MHz fT Transition frequency IC=1A ; VCE=20V ;f=0.5MHz VBEsat 2 140 UNIT V 60 500 1.0 pF MHz Inchange Semiconductor Product Specification 2N5631 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3