Inchange Semiconductor Product Specification 2N5743 2N5744 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 导体 半 电 l 固 Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VCEO VEBO EMIC S E G AN 2N5743 VCBO Collector-base voltage INCH OND Open emitter 2N5744 2N5743 Collector-emitter voltage R O T UC VALUE -60 V -100 -60 Open base 2N5744 Emitter-base voltage Open collector UNIT V -100 -5 V -20 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=100℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5743 2N5744 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5743 MIN TYP. MAX UNIT -60 IC=-0.2A ;IB=0 V 2N5744 -100 VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-1A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-20A ;IB=-4A -3.0 V Base-emitter saturation voltage IC=-10A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-10A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ -0.5 -5.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 DC current gain IC=-10A ; VCE=-5V VBEsat hFE-1 hFE-2 fT 体 半导 固电 N A H INC Transition frequency D N O IC M E S GE DC current gain R O T UC -1.0 20 IC=-20A ; VCE=-5V 10 IC=-1A ; VCE=-10V 10 2 mA 80 MHz Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5743 2N5744 PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3