ISC 2N5877

Inchange Semiconductor
Product Specification
2N5877 2N5878
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector saturation voltage
・Complement to type 2N5875 2N5876
APPLICATIONS
・For general-purpose power amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
体
半导
SYMBOL
固电
VCBO
PARAMETER
2N5877
Collector-base voltage
Open emitter
G
N
A
CH
Collector-emitter voltage
IN
Open collector
UNIT
60
V
80
60
V
80
5
V
Collector current
10
A
ICM
Collector current-peak
20
A
IB
Base current
4
A
PD
Total Power Dissipation
150
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.17
℃/W
IC
Emitter-base voltage
VALUE
Open base
2N5878
VEBO
OND
IC
M
E
ES
2N5878
2N5877
VCEO
R
O
T
UC
CONDITIONS
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N5877 2N5878
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5877
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
60
IC=0.2A ;IB=0
V
2N5878
80
VCEsat-1
Collector-emitter saturation voltage
IC=5A;IB=0.5A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A;IB=2.5A
3.0
V
Base-emitter saturation voltage
IC=10A;IB=2.5A
2.5
V
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
1.5
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IB=0
0.5
mA
VBEsat
ICEO
体
半导
固电
2N5877
2N5878
R
O
T
UC
VCE=30V; IB=0
Collector
cut-off current
D
N
O
IC
VCE=40V; IB=0
M
E
S
E
VCE=ratedVCE; VBE=1.5V
TC=150℃
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=1A ; VCE=4V
35
hFE-2
DC current gain
IC=4A ; VCE=4V
20
hFE-3
DC current gain
IC=10A ; VCE=4V
4
Trainsistion frequency
IC=0.5A ; VCE=10V;f=1MHz
4
fT
G
N
A
INCH
VEB=5V; IC=0
2
1.0
mA
0.5
5.0
mA
1.0
mA
100
MHz
Inchange Semiconductor
Product Specification
2N5877 2N5878
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3