isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor TIP36E DESCRIPTION ·DC Current Gain: hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -140V(Min) ·Complement to Type TIP35E ·Current Gain-Bandwidth Product: fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT -180 V s c s i . w w w -140 -5 V V IC Collector Current -Continuous -25 A ICM Collector Current-peak -40 A IB Base Current -5 A PC Collector Power Dissipation@ TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ MAX UNIT 1.0 ℃/W B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor TIP36E ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15A; IB= -3A -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -25A; IB= -6.25A -5.0 V VBE(on)-1 Base-Emitter On Voltage IC= -15A; VCE= -4V -2.0 V VBE(on)-2 Base-Emitter On Voltage IC= -25A; VCE= -4V -4.0 V ICEO Collector Cutoff Current VCE= -90V; IB= 0 -1.0 mA ICES Collector Cutoff Current VCE= -180V; VBE= 0 -0.7 mA IEBO Emitter Cutoff Current -1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT CONDITIONS B m e s isc w. w w Current-Gain—Bandwidth Product VEB= -5V; IC= 0 IC= -1.5A; VCE= -4V MIN MAX -140 n c . i UNIT V 25 IC= -15A; VCE= -4V 8 IC= -1A ; VCE= -10V; ftest= 1.0MHz 3 MHz Switching Times ton Turn-On Time toff Turn-Off Time 1.2 μs 0.9 μs IC= -15A; IB1= -IB2= -1.5A; VBE(off)= -4.15V; RL= 2Ω isc Website：www.iscsemi.cn