Inchange Semiconductor Product Specification 2N5970 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High power dissipations APPLICATIONS ・Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 5 A PD Total Power Dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.1 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5970 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN TYP. MAX Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat-1 Collector-emitter saturation voltge IC=7A ;IB=0.7A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3.75A 4.0 V Base-emitter saturation voltage IC=15A; IB=3.75A 2.5 V ICEO Collector cut-off current VCE=30V; IB=0 1.0 mA ICEV Collector cut-off current VCE=80V; VBE(off)=1.5V TC=150℃ 0.5 5.0 mA ICBO Collector cut-off current VCB=80V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=1.5V 20 hFE-2 DC current gain IC=15A ; VCE=4V 4 Transition frequency IC=1A;VCE=10V 4 VBEsat fT 2 60 UNIT V 60 MHz Inchange Semiconductor Product Specification 2N5970 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3