Inchange Semiconductor Product Specification 2N6359 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain ・Excellent safe operating area APPLICATIONS ・Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current-peak 30 A IB Base current 4 A PD Total Power Dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6359 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=3.2A 4.0 V VBE Base-emitter on voltage IC=8A ; VCE=4V 2.2 V ICEO Collector cut-off current VCE=80V; IB=0 2.0 mA ICEX Collector cut-off current VCE=100V; VBE(off)=1.5V TC=150℃ 2.0 10.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=8A ; VCE=4V 15 hFE-2 DC current gain IC=16A ; VCE=4V 5 Transition freuqency IC=1A ; VCE=4V 0.2 fT CONDITIONS 2 MIN TYP. MAX 80 UNIT V 60 MHz Inchange Semiconductor Product Specification 2N6359 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3