isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6704 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 130V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1.5V 180 V VCEO Collector-Emitter Voltage 130 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 5 A PC Collector Power Dissipation TC=25℃ 50 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.5 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6704 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 0.7 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A 1.5 V Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.4 V ICEV Collector Cutoff Current VCEV= 180V;VBE=-1.5V VCEV= 180V;VBE=-1.5V;TJ= 125℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 0.2A ; VCE= 2V 30 hFE-2 DC Current Gain IC= 4A ; VCE= 2V 20 COB Output Capacitance IE= 0; VCB= 10V, ftest= 0.1MHz 50 150 pF Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V, ftest= 1MHz 50 200 MHz VBE(sat) fT CONDITIONS MIN MAX 130 B B B UNIT V Switching Times td Delay Time 0.1 μs tr Rise Time 0.25 μs ts Storage Time 1 μs tf Fall Time 0.5 μs IC= 4A; IB1= -IB2= 0.4A,VBE= -4V isc Website：www.iscsemi.cn