ISC 2SC2564

Inchange Semiconductor
Product Specification
2SC2564
Silicon NPN Power Transistors
・
DESCRIPTION
・With MT-200 package
・Complement to type 2SA1094
・High transition frequency
APPLICATIONS
・For power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25°C)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
IB
Base current
1.2
A
PC
Collectorl power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2564
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=0.1A; IB=0
140
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
5
V
Collector-emitter saturation voltage
IC=5 A; IB=0.5 A
2.0
V
VBE
Base-emitter on voltage
IC=5A ; VCE=5V
2.0
V
ICBO
Collector cut-off current
VCB=140V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
hFE-2
DC current gain
IC=5A ; VCE=5V
40
Transition frequency
IC=1A ; VCE=10V
VCEsat
fT
‹
CONDITIONS
hFE-1 classifications
R
O
Y
55-110
80-160
120-240
2
MIN
TYP.
MAX
UNIT
240
80
MHz
Inchange Semiconductor
Product Specification
2SC2564
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3