Inchange Semiconductor Product Specification 2SC2564 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SA1094 ・High transition frequency APPLICATIONS ・For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25°C) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A IB Base current 1.2 A PC Collectorl power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2564 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0 140 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V Collector-emitter saturation voltage IC=5 A; IB=0.5 A 2.0 V VBE Base-emitter on voltage IC=5A ; VCE=5V 2.0 V ICBO Collector cut-off current VCB=140V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=5A ; VCE=5V 40 Transition frequency IC=1A ; VCE=10V VCEsat fT CONDITIONS hFE-1 classifications R O Y 55-110 80-160 120-240 2 MIN TYP. MAX UNIT 240 80 MHz Inchange Semiconductor Product Specification 2SC2564 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3