Inchange Semiconductor Product Specification 2SA1094 Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IB Base current -1.2 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1094 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ; IB=0 -140 V V(BR)EBO Emitter-base breakdown voltage IE=-0.01A ; IC=0 -5 V Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-5A ; VCE=-5V 30 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 220 pF fT Transition frequency IC=-1A ; VCE=-10V 70 MHz VCEsat CONDITIONS B O Y 55-110 80-160 120-240 TYP. B hFE-1 classifications R MIN 2 MAX UNIT 240 Inchange Semiconductor Product Specification 2SA1094 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3