Inchange Semiconductor Product Specification 2SC2565 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SA1095 ・High transition frequency APPLICATIONS ・For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol 体 导 半 Absolute maximum ratings (Ta=25°C) 固电 SYMBOL VCBO VCEO VEBO PARAMETER D N O IC R O T UC VALUE UNIT Open emitter 160 V Collector-emitter voltage Open base 160 V Emitter-base voltage Open collector 5 V EM S E G N A H Collector-base voltage INC CONDITIONS IC Collector current 15 A IB Base current 1.5 A PC Collectorl power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2565 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0 160 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V Collector-emitter saturation voltage IC=5 A; IB=0.5 A 2.0 V VBE Base-emitter on voltage IC=5A ; VCE=5V 2.0 V ICBO Collector cut-off current VCB=160V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=5A ; VCE=5V 40 VCEsat fT COB 体 导 半 Transition frequency 固电 55-110 IE=0; VCB=10V;f=1MHz A H C IN O Y 80-160 120-240 2 MIN TYP. MAX UNIT 240 R O T UC D N O IC IC=1A ; VCE=10V EM S E NG Output capacitance hFE-1 classifications R CONDITIONS 80 MHz 200 pF Inchange Semiconductor Product Specification 2SC2565 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC