Inchange Semiconductor Product Specification 2SD381 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB536 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 130 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A IB Base current 0.3 A PT Total power dissipation B Ta=25℃ 1.5 W TC=25℃ 20 Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SD381 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=3V; IC=0 1.0 μA hFE-1 DC current gain IC=5mA ; VCE=5V 25 hFE-2 DC current gain IC=0.3A ; VCE=5V 40 COB Output capacitance IE=0 ; VCB=10V; f=1MHz 25 pF fT Transition frequency IC=0.1A ; VCE=5V 45 MHz CONDITIONS hFE-2 Classifications N M L K 40-80 60-120 80-160 120-250 2 MIN TYP. MAX 120 UNIT V 250 Inchange Semiconductor Product Specification 2SD381 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3