Inchange Semiconductor Product Specification 2SA1142 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC2682 APPLICATIONS ·Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-126) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V -0.1 A IC Collector current PC Collector power dissipation Ta=25℃ 1.2 TC=25℃ 8 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1142 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat CONDITIONS TYP. MAX UNIT IC=-50mA; IB=-5mA -0.16 -0.5 V Base-emitter saturation voltage IC=-50mA; IB=-5mA -0.8 -1.5 V ICBO Collector cut-off current VCB=-180V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-1mA ; VCE=-5V 90 200 hFE-2 DC current gain IC=-10mA ; VCE=-5V 100 200 fT Transition frequency IC=-20mA ; VCE=-10V 180 MHz Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 4.5 pF hFE-2 Classifications O Y 100-200 160-320 2 MIN 320 Inchange Semiconductor Product Specification 2SA1142 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3