ISC 2SA1142

Inchange Semiconductor
Product Specification
2SA1142
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SC2682
APPLICATIONS
·Audio frequency power amplifier; high
frequency power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-126) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-180
V
VCEO
Collector-emitter voltage
Open base
-180
V
VEBO
Emitter-base voltage
Open collector
-5
V
-0.1
A
IC
Collector current
PC
Collector power dissipation
Ta=25℃
1.2
TC=25℃
8
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1142
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
‹
CONDITIONS
TYP.
MAX
UNIT
IC=-50mA; IB=-5mA
-0.16
-0.5
V
Base-emitter saturation voltage
IC=-50mA; IB=-5mA
-0.8
-1.5
V
ICBO
Collector cut-off current
VCB=-180V; IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1
μA
hFE-1
DC current gain
IC=-1mA ; VCE=-5V
90
200
hFE-2
DC current gain
IC=-10mA ; VCE=-5V
100
200
fT
Transition frequency
IC=-20mA ; VCE=-10V
180
MHz
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
4.5
pF
hFE-2 Classifications
O
Y
100-200
160-320
2
MIN
320
Inchange Semiconductor
Product Specification
2SA1142
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3