Inchange Semiconductor Product Specification 2SC1863 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=7A ·Power dissipation –PC=40W @TC=25℃ APPLICATIONS ·Designed for general-purpose amplifier and switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V 7 A 40 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1863 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 Collector-emitter saturation voltage IC=1A ;IB=0.1A 0.5 V VBE Base-emitter on voltage IC=1A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=150V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=3A ; VCE=5V 20 hFE-2 DC current gain IC=5A ; VCE=5V 15 VCEsat CONDITIONS 2 MIN TYP. MAX UNIT 100 V 7 V Inchange Semiconductor Product Specification 2SC1863 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3