Inchange Semiconductor Product Specification 2SC1444 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A IB Base current 1 A PD Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1444 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=30mA ;IB=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=6A; IB=1A 1.5 V VBE Base-emitter on voltage IC=6A ; VCE=4V 2.0 V ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=4V 30 hFE-2 DC current gain IC=3A ; VCE=4V 15 Transition frequency IC=0.5A ; VCE=10V VCEsat fT CONDITIONS 2 MIN TYP. 10 MAX UNIT MHz Inchange Semiconductor Product Specification 2SC1444 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3