isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min.) APPLICATIONS ·Designed for high current switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO w w VALUE UNIT 100 V 100 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current- Continuous 5 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1525 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1525 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20A, IB= 0.2A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 20A, IB= 0.2A 2.5 V ICBO Collector Cutoff current VCB= 100V, IE= 0 0.1 mA IEBO Emitter Cutoff current VEB= 5V, IC= 0 10 mA hFE-1 DC Current Gain hFE-2 DC Current Gain VECF C-E Diode Forward Voltage 3.0 V fT COB w w Output Capacitance ton Turn-On Time tstg Storage Time Fall Time isc Website：www.iscsemi.cn MIN TYP. MAX 100 n c . i m e s c is w. Current-Gain—Bandwidth Product Switching Times tf CONDITIONS IC= 20A; VCE= 5V 1000 IC= 30A; VCE= 5V 200 UNIT V IF= 10A IC= 1A; VCE= 5V 10 MHz IE= 0; VCB= 10V; ftest= 1MHz 500 pF 1.5 μs 10 μs 1.5 μs IB1 = -IB2= 10mA; VCC= 50V; RL= 10Ω