Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5099 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ 1 Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-2A;IB=-0.2 A -0.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-2A ; VCE=-4V fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 150 pF 0.18 μs 1.10 μs 0.21 μs -80 UNIT V 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=-3A;RL=10Ω IB1=-IB2=-0.3A;VCC=-30V hFE classifications O P Y 50-100 70-140 90-180 2 Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors 4