ISC 2SA1170

Inchange Semiconductor
Product Specification
2SA1170
Silicon PNP Power Transistors
DESCRIPTION
·With MT-200 package
·High power dissipation
·Complement to type 2SC2774
APPLICATIONS
·Audio and general purpose applications
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-200
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-17
A
IB
Base current
-5
A
PC
Collector power dissipation
200
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1170
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ; IB=0
-200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ; IC=0
-6
V
Collector-emitter saturation voltage
IC=-10A ;IB=-1A
-2.5
V
ICBO
Collector cut-off current
VCB=-200V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
μA
hFE
DC current gain
IC=-8A ; VCE=-4V
Transition frequency
IC=-1A ; VCE=-12V
VCEsat
fT
CONDITIONS
B
MIN
TYP.
MAX
UNIT
20
20
MHz
0.6
μs
0.9
μs
0.2
μs
Switching times
tr
tstg
tf
Rise time
Storage time
IC=-10A; IB1=- IB2=-1A
RL=4Ω;VCC=-40V
Fall time
2
Inchange Semiconductor
Product Specification
2SA1170
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3