Inchange Semiconductor Product Specification 2SA1488 2SA1488A Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SC3851/3851A APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA1488 VCBO Collector-base voltage -60 Open base 2SA1488A VEBO Emitter-base voltage V -80 2SA1488 Collector-emitter voltage UNIT -60 Open emitter 2SA1488A VCEO VALUE V -80 Open collector -6 V IC Collector current -4 A IB Base current -1 A PC Collector dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1488 2SA1488A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SA1488 ICBO MAX IC=-25mA ; IB=0 2SA1488 2SA1488A UNIT V B Collector-emitter saturation voltage Collector cut-off current TYP. -60 2SA1488A VCEsat MIN -80 IC=-2.0A;IB=-0.2A -0.5 V -0.1 mA -0.1 mA VCB=-60V;IE=0 VCB=-80V;IE=0 IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-1A ; VCE=-4V fT Transition frequency IC=-0.2A ; VCE=-12V 15 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 90 pF 0.25 μs 0.75 μs 0.25 μs 40 Switching time ton Turn-on time ts Storage time tf Fall time IC=-2.0A; IB1=-IB2=-0.2A VCC=-12V ,RL=6Ω 2 Inchange Semiconductor Product Specification 2SA1488 2SA1488A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1488 2SA1488A Silicon PNP Power Transistors 4