isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·Complement to Type 2SC3944/A APPLICATIONS ·Designed for low-frequency driver and high power amplification, is optimum for the driver-stage of a 60W to 100 W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO PARAMETER 2SA1535 -150 2SA1535A -180 2SA1535 -150 Collector-Base Voltage UNIT V Collector-Emitter Voltage V 2SA1535A VEBO VALUE -180 Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IC Collector Current-Peak -1.5 A PC TJ Tstg Collector Power Dissipation @ TC=25℃ 15 Collector Power Dissipation @ Ta=25℃ 2 Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn W 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1535/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1535 V(BR)CEO Collector-Emitter Breakdown Voltage TYP. MAX UNIT -150 IC= -50mA ; IB= 0 2SA1535A V -180 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -2.0 V ICBO Collector Cutoff Current VCB= -150V ; IE= 0 -10 μA hFE-1 DC Current Gain IC= -150mA ; VCE= -10V 90 hFE-2 DC Current Gain IC= -0.5A ; VCE= -5V 50 COB Output Capacitance IE= 0; VCB= -10V;ftest= 1MHz 30 pF Current-Gain—Bandwidth Product IC= -50mA;VCE= -10V;ftest= 10MHz 200 MHz fT MIN R S 90-155 130-220 185-330 isc Website：www.iscsemi.cn V B B hFE-1 Classifications Q -5 2 330