isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A ·Complement to Type 2SC2690/A APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE 2SA1220 VCBO VCEO -120 Collector-Base Voltage V 2SA1220A -160 2SA1220 -120 Collector-Emitter Voltage V 2SA1220A VEBO UNIT Emitter-Base Voltage -160 -5 V IC Collector Current-Continuous -1.2 A ICM Collector Current-Peak -2.5 A IB Base Current-Continuous -0.3 A Collector Power Dissipation @ Ta=25℃ 1.2 B PC TJ Tstg W Total Power Dissipation @ TC=25℃ 20 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1220/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= -1A; IB= -0.2A -0.7 V Base-Emitter Saturation Voltage IC= -1A; IB= -0.2A -1.3 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -3V; IC=0 -1.0 μA hFE-1 DC Current Gain IC= -5mA ; VCE= -5V 35 hFE-2 DC Current Gain IC= -0.3A ; VCE= -5V 60 Current-Gain—Bandwidth Product IC= -0.2A ; VCE= -5V 175 MHz Output Capacitance IE= 0; VCB= -10V;ftest= 1.0MHz 26 pF fT COB CONDITIONS Q P 60-120 100-200 160-320 isc Website：www.iscsemi.cn TYP. B B hFE-2 Classifications R MIN 2 320