Inchange Semiconductor Product Specification 2SA1718 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-peak -10 A IB Base current -0.5 A PC Collector dissipation B TC=25℃ 20 Ta=25℃ 2.0 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1718 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-2mA -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ; IB=-2mA -2.0 V ICBO Collector cut-off current VCB=-100V;IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V;IC=0 -5.0 mA hFE-1 DC current gain IC=-2A ; VCE=-2V 2000 hFE-2 DC current gain IC=-4A ; VCE=-2V 500 CONDITIONS hFE classifications M L K 2000-5000 4000-10000 8000-20000 2 MIN TYP. MAX -100 UNIT V 20000 Inchange Semiconductor Product Specification 2SA1718 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3