Inchange Semiconductor Product Specification 2SC3272 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For power amplification PINNING（see Fig.2） PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.1 A ICM Collector current-peak 0.2 A PC Collector power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3272 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2.0 V VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5m A V(BR)CBO Collector-base breakdown voltage IC=10μA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 5 V hFE DC current gain IC=10mA ; VCE=10V 39 ICBO Collector cut-off current VCB=200V; IE=0 0.5 μA IEBO Emitter cut-off current VEB=4V; IC=0 0.5 μA COB Output capacitance IE=0; VCB=30V;f=1MHz fT Transition frequency IC=10mA ; VCB=30V 2 180 3 50 pF MHz Inchange Semiconductor Product Specification 2SC3272 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3