Inchange Semiconductor Product Specification 2SC3854 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1490 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 Absolute maximum ratings(Ta=℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage IN Emitter-base voltage CONDITIONS C I M E SE G N A CH Collector-emitter voltage OND Open emitter Open base Open collector R O T UC VALUE UNIT 160 V 120 V 6 V 8 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3854 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=160V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=3A ; VCE=4V Transition frequency IC=0.5A ; VCE=12V VCEsat fT CONDITIONS 体 导 半 固电 EM S E NG A H C IN 2 MIN TYP. MAX UNIT 50 20 D N O IC R O T UC MHz Inchange Semiconductor Product Specification 2SC3854 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3