Inchange Semiconductor Product Specification 2SB511 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD325 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -35 V VCEO Collector-emitter voltage Open base -35 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -1.5 A ICM Collector current -peak -3.0 A PC Collector dissipation Ta=25℃ 1.75 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SB511 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A -1.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 40 hFE-2 DC current gain IC=-0.1A ; VCE=-2V 35 Transition frequency IC=-0.5A ; VCE=-5V fT CONDITIONS hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 2 MIN TYP. MAX -35 UNIT V 320 8 MHz Inchange Semiconductor Product Specification 2SB511 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3