isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA795 DESCRIPTION ·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 APPLICATIONS ·Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse -1.5 A PC Collector Power Dissipation @ TC=25℃ 10 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA795 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A ; IB= 0 -150 V V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -300mA; IB= -30mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -300mA; IB= -30mA -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -1 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1 μA hFE-1 DC Current Gain IC= -150mA ; VCE= -10V 65 hFE-2 DC Current Gain IC=-500mA ; VCE= -5V 50 Current-Gain—Bandwidth Product IC= -50mA ; VCE= -10V Output Capacitance IE=0 ; VCB= -100V,ftest= 1MHz fT COB CONDITIONS hFE-1 Classifications P Q R S 65-110 90-155 130-220 185-330 isc Website：www.iscsemi.cn 2 MIN TYP. MAX UNIT 330 120 MHz 15 pF