Inchange Semiconductor Product Specification 2SA913 2SA913A Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1913/1913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA913 VCBO Collector-base voltage -150 Open base 2SA913A VEBO Emitter-base voltage V -180 2SA913 Collector-emitter voltage UNIT -150 Open emitter 2SA913A VCEO VALUE V -180 Open collector -5 V -1 A -1.5 A 15 W IC Collector current ICM Collector current-peak PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA913 2SA913A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SA913 Base-emitter saturation voltage TYP. MAX UNIT -150 IC=-0.1mA ,IB=0 V B 2SA913A Emitter-base breakdown voltage Collector-emitter saturation voltage MIN -180 IE=-10μA ,IC=0 -5 V 2SA913 IC=-0.5A; IB=-50mA -1.0 2SA913A IC=-0.3A; IB=-30mA -1.5 2SA913 IC=-0.5A; IB=-50mA 2SA913A IC=-0.3A; IB=-30mA V -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1 μA hFE-1 DC current gain IC=-150mA ; VCE=-10V 65 hFE-2 DC current gain IC=-500mA ; VCE=-5V 50 COB Output capacitance IE=0 ;VCB=-100V;f=1MHz fT Transition frequency IC=50mA ; VCE=-10V hFE-1 Classifications P Q R S 65-110 90-155 130-220 185-330 2 330 15 120 pF MHz Inchange Semiconductor Product Specification 2SA913 2SA913A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3