Inchange Semiconductor Product Specification 2SD844 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SB754 ・High collector current :IC=7A ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IE Emitter current -7 A PC Collector power dissipation Ta=25℃ 2.5 TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD844 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 50 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V Collector-emitter saturation voltage IC=4.0A; IB=0.4A 0.4 V VBE Base-emitter voltage IC=4A ; VCE=1V 1.2 V ICBO Collector cut-off current VCB=50V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=4A ; VCE=1V 30 Transition frequency IC=1A ; VCE=5V 15 MHz Collector output capacitance f=1MHz ; VCB=10V 250 pF VCEsat fT COB CONDITIONS hFE-1 Classifications O Y 70-140 120-240 2 MIN TYP. MAX UNIT 240 Inchange Semiconductor Product Specification 2SD844 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3