Inchange Semiconductor Product Specification 2SB1190 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High VCEO ・Large PC ・Complement to type 2SD1772 APPLICATIONS ・Power amplifier ・TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1 A ICM Collector current-peak -2 A PC Collector power dissipation Ta=25℃ 1.4 W TC=25℃ 25 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1190 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-5mA , B=0 V(BR)EBO Emitter-base breakdown voltage IE=-0.5mA ,IC=0 Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.0 V VBE Base-emitter on voltage IC=-300mA ; VCE=-10V -1.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -50 μA hFE-1 DC current gain IC=-100mA ; VCE=-10V 60 hFE-2 DC current gain IC=-300mA ; VCE=-10V 50 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 35 pF fT Transition frequency IC=-100mA ; VCE=-10V 20 MHz VCEsat CONDITIONS hFE-1 Classifications Q P 60-140 100-240 2 MIN TYP. MAX UNIT -150 V -6 V 240 Inchange Semiconductor Product Specification 2SB1190 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3