Inchange Semiconductor Product Specification 2SD1562 2SD1562A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB1085/1085A ・High transition frequency APPLICATIONS ・For low freuqency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 Absolute maximum ratings(Tc=25℃) 固电 SYMBOL VCBO VCEO EM S E NG PARAMETER A H C IN 2SD1562 Collector-base voltage D N O IC CONDITIONS 2SD1562A 2SD1562 Collector-emitter voltage Emitter-base voltage VALUE UNIT 120 Open emitter V 160 120 Open base 2SD1562A VEBO R O T UC V 160 Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A PC Collector power dissipation TC=25℃ 20 Ta=25℃ 1.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1562 2SD1562A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1562 V(BR)CEO MAX IC=1mA; IB=0 UNIT V 160 2SD1562 120 Collector-base breakdown voltage IC=50μA; IE=0 2SD1562A V(BR)EBO TYP. 120 Collector-emitter breakdown voltage 2SD1562A V(BR)CBO MIN V 160 Emitter-base breakdown voltage IE=50μA; IC=0 VCEsat Collector-emitter saturation voltage IC=1 A;IB=0.1 A 2.0 V VBEsat Base-emitter on saturation voltage IC=1 A;IB=0.1 A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current 1.0 μA hFE 固电 fT COB 体 导 半 VEB=4V; IC=0 EM S E NG 2SD1562 DC current gain 5 V R O T UC D N O IC 60 320 IC=0.1A ; VCE=5V A H C IN Transition frequency 2SD1562A Output capacitance 60 200 IE=-0.1A ; VCE=5V 80 MHz IE=0 ; VCB=10V;f=1MHz 20 pF hFE classifications TYPE D E F 2SD1562 60-120 100-200 160-320 2SD1562A 60-120 100-200 2 Inchange Semiconductor Product Specification 2SD1562 2SD1562A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3