Inchange Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC1985 VCBO Collector-base voltage 60 Open base 2SC1986 VEBO Emitter-base voltage V 100 2SC1985 Collector-emitter voltage UNIT 80 Open emitter 2SC1986 VCEO VALUE V 80 Open collector 6 V IC Collector current 6 A IB Base current 3 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC1985 V(BR)CEO Collector-emitter breakdown voltage ICBO MAX UNIT 60 V 80 Collector-emitter saturation voltage IC=3A; IB=0.3A 2SC1985 VCB=80V; IE=0 Collector cut-off current 2SC1986 1.0 V 1.0 mA 1.0 mA VCB=100V; IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=1A ; VCE=4V Transition frequency IC=0.5A ; VCE=12V fT TYP. IC=25mA ,IB=0 2SC1986 VCEsat MIN 40 10 MHz 1.1 μs 1.8 μs 0.55 μs Switching times tr tstg tf Rise time Storage time IC=3A ; VCC=9V IB1=-IB2=0.3A;RL=3Ω Fall time 2 Inchange Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3