ISC 2SC1986

Inchange Semiconductor
Product Specification
2SC1985 2SC1986
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SA770/771
·Low collector saturation voltage
APPLICATIONS
·For general and industrial purpose
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC1985
VCBO
Collector-base voltage
60
Open base
2SC1986
VEBO
Emitter-base voltage
V
100
2SC1985
Collector-emitter voltage
UNIT
80
Open emitter
2SC1986
VCEO
VALUE
V
80
Open collector
6
V
IC
Collector current
6
A
IB
Base current
3
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1985 2SC1986
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC1985
V(BR)CEO
Collector-emitter
breakdown voltage
ICBO
MAX
UNIT
60
V
80
Collector-emitter saturation voltage
IC=3A; IB=0.3A
2SC1985
VCB=80V; IE=0
Collector
cut-off current
2SC1986
1.0
V
1.0
mA
1.0
mA
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=1A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=12V
fT
TYP.
IC=25mA ,IB=0
2SC1986
VCEsat
MIN
40
10
MHz
1.1
μs
1.8
μs
0.55
μs
Switching times
tr
tstg
tf
Rise time
Storage time
IC=3A ; VCC=9V
IB1=-IB2=0.3A;RL=3Ω
Fall time
2
Inchange Semiconductor
Product Specification
2SC1985 2SC1986
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3