Inchange Semiconductor Product Specification 2SA1205 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -12 A IB Base current -4 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1205 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.12A -0.5 V ICBO Collector cut-off current VCB=-70V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-0.5V Transition frequency IE=3A ; VCE=-12V fT CONDITIONS MIN TYP. MAX -50 UNIT V 40 20 MHz 0.60 μs 0.50 μs 0.25 μs Switching times ton Turn-on time tstg Storage time tf IC=-5A;RL=4Ω IB1=-IB2=-0.12A VCC=-20V Fall time 2 Inchange Semiconductor Product Specification 2SA1205 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3